Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films

Published:2017-05-31 Issue:6S1 Volume:56 Page:06GH08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Luchinin Viktor V.,Goloudina Svetlana I.,Pasyuta Vyacheslav M.,Panov Mikhail F.,Smirnov Alexander N.,Kirilenko Demid A.,Semenova Tatyana F.,Sklizkova Valentina P.,Gofman Iosif V.,Svetlichnyi Valentin M.,Kudryavtsev Vladislav V.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=6S1/a=06GH08/pdf

Reference29 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes

3. Electrical properties of strained nano-thin 3C–SiC/Si heterostructures

4. SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

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1. Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate;Nanotechnology;2024-04-09

2. Synthesis of ultrathin heteroepitaxial 3C-SiC films by pyrolysis of molecular layer deposition polyamide films on Si;Journal of Vacuum Science & Technology A;2022-09

3. Molecular Layer Deposition and Pyrolysis of Polyamide Films on Si(111) with Formation of β-SiC;Russian Journal of Physical Chemistry A;2021-07