Si‐GaAs(001) superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107499
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1. AlGaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy
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4. Huge electric fields in Ge/GaAs (001) and (111) superlattices and their effect on interfacial stability
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1. Anisotropic elasticity of multilayered crystals deformed by a biperiodic network of misfit dislocations;Physical Review B;2007-10-24
2. Evidence of electronic confinement in pseudomorphic Si/GaAs superlattices;Physical Review B;1998-06-15
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4. Heterojunction band offset engineering;Surface Science Reports;1996
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