Stability and band offsets of heterovalent superlattices: Si/GaP, Ge/GaAs, and Si/GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3213/fulltext
Reference26 articles.
1. Stability of coherently strained semiconductor superlattices
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3. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface
4. Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic Structure
5. Failure of the transitivity rule for (GaAs)3/(Ge)6(110) and (AlAs)3/(Ge)6(110) superlattice valence-band offsets
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