Huge electric fields in Ge/GaAs (001) and (111) superlattices and their effect on interfacial stability
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.3509/fulltext
Reference18 articles.
1. Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices
2. Large interfacial charge density in unstrained GaAs-AlAs(111) superlattices
3. Failure of the transitivity rule for (GaAs)3/(Ge)6(110) and (AlAs)3/(Ge)6(110) superlattice valence-band offsets
4. Electronic structure of the GeGaAs (111) and () heterojunctions
5. Surface and interface states of (111) faces of semiconductors
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