Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4723719
Reference19 articles.
1. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
2. Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers
3. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
4. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
5. Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors
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4. Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate;Materials;2023-04-26
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