Dual implantation of Be+and F+in GaAs and AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98719
Reference6 articles.
1. Ion implantation in compound semiconductors–an approach based on solid state theory
2. Formation ofp+-layer in GaAs by dual implantation of Zn and As
3. Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs
4. Rapid thermal annealing of Mg++As+dual implants in GaAs
5. Improved activation of Mg+and As+dual implants in GaAs by capless rapid thermal annealing
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1. Characteristics of fully implanted GaAs vertical PIN diodes;Solid-State Electronics;1997-01
2. Diffusion of implanted Be in AlxGa1−xAs as a function of Al concentration and anneal temperature;Applied Physics Letters;1995-01-16
3. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30
4. Thermally stable ohmic contacts top‐type GaAs. IX. NiInW and NiIn(Mn)W contact metals;Journal of Applied Physics;1991-12-15
5. Transition metal implants in In0.53Ga0.47As;Journal of Applied Physics;1991-04-15
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