Diffusion of implanted Be in AlxGa1−xAs as a function of Al concentration and anneal temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114211
Reference19 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes;Novel In-Plane Semiconductor Lasers XXI;2022-03-04
2. Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate;IEEE Journal of Selected Topics in Quantum Electronics;2022-01
3. Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices;Journal of Applied Physics;1999-10-15
4. Is the be incorporation the same in (311)A and (100) AlGaAs?;Microelectronics Journal;1997-10
5. Rapid thermal annealing of arsenic implanted Si1−xGex epilayers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-03
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