Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371362
Reference6 articles.
1. Diffusion of implanted Be in AlxGa1−xAs as a function of Al concentration and anneal temperature
2. Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth
3. Maximum concentration of impurities in semiconductors
4. Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source
5. N‐andP‐type dopant profiles in distributed Bragg reflector structures and their effect on resistance
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