Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions-Reference-Cited by-同舟云学术

Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions

Published:2018-12-17 Issue:3 Volume:15 Page:1803684
ISSN:1613-6810
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Author:

Zhang Yunyan¹^ORCID,Sanchez Ana M.²,Aagesen Martin³,Huo Suguo⁴,Fonseka H. Aruni²,Gott James A.²,Kim Dongyoung¹,Yu Xuezhe¹,Chen Xingyou⁵,Xu Jia¹,Li Tianyi⁴,Zeng Haotian¹,Boras Giorgos¹,Liu Huiyun¹

Affiliation:

1. Department of Electronic and Electrical Engineering University College London London WC1E 7JE UK

2. Department of Physics University of Warwick Coventry CV4 7AL UK

3. Center for Quantum Devices Niels Bohr Institute University of Copenhagen Universitetsparken 5 2100 Copenhagen Denmark

4. London Centre for Nanotechnology University College London London WC1H 0AH UK

5. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201803684

Reference51 articles.

1. Functional Nanowires

2. III–V nanowires and nanowire optoelectronic devices

3. Nanowire photonics