Oxygen distribution in silicon‐on‐insulator layers obtained by zone melting recrystallization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344520
Reference23 articles.
1. Oxygen in zone‐melting‐recrystallized silicon‐on‐insulator films: Its distribution and possible role in sub‐boundary formation
2. Role of impurities in zone melting recrystallization of 10 μm thick polycrystalline silicon films
3. Si‐on‐insulator films of high crystal perfection by zone melting under a SiO2cap provided with vent openings
4. Oxygen redistribution in silicon during zone melting recrystallization
5. Observation on laser‐annealed silicon‐on‐insulator structures by cross‐sectional transmission electron microscopy
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1. Controlled line shaped electron beam for silicon zone melting recrystallization on float glass substrates;Review of Scientific Instruments;2005-06
2. Thermodynamics and phase stability in the Si–O system;Journal of Non-Crystalline Solids;2004-04
3. SOI Materials;Silicon-on-Insulator Technology: Materials to VLSI;1997
4. Oxygen redistribution during diffusion in thin silicon layers;Materials Science and Engineering: B;1996-01
5. Oxygen redistribution during diffusion in thin silicon layers;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
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