Si‐on‐insulator films of high crystal perfection by zone melting under a SiO2cap provided with vent openings
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96247
Reference9 articles.
1. Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven
2. Wetting Angles and Surface Tension in the Crystallization of Thin Liquid Films
3. Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2layers
4. Defect Etch for <100> Silicon Evaluation
5. Sub-Boundary Formation and Suppression in Silicon films Recrystallized by Scanned Zone Melting
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1. Conversion efficiency and process stability improvement of electron beam crystallized thin film silicon solar cells on glass;Solar Energy Materials and Solar Cells;2014-04
2. Oxygen distribution in silicon‐on‐insulator layers obtained by zone melting recrystallization;Journal of Applied Physics;1990-06-15
3. Consideration on the void generation mechanism in electron‐beam recrystallized silicon‐on‐insulator films;Journal of Applied Physics;1989-03
4. Influence of SiO2 cap layers on lateral solid-phase epitaxy of implanted amorphous Si films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
5. Pseudoline electron beam recrystallization of silicon-on-insulator;Materials Science Reports;1989-01
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