Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4937732
Reference34 articles.
1. Boron-doped a-Si:H∕c-Si interface passivation: Degradation mechanism
2. Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements
3. Stretched-exponential a-Si:H∕c-Si interface recombination decay
4. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon
5. Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity
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