Boron-doped a-Si:H∕c-Si interface passivation: Degradation mechanism
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2783972
Reference23 articles.
1. A 720 mV open circuit voltage SiOx:c‐Si:SiOxdouble heterostructure solar cell
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3. Metal‐semiconductor junctions and amorphous‐crystalline heterojunctions using B‐doped hydrogenated amorphous silicon
4. Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
5. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
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