Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives-Reference-Cited by-同舟云学术

Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives

Published:2022-02-08 Issue:7 Volume:7 Page:6053-6057
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Vyacheslavova Ekaterina A.¹^ORCID,Morozov Ivan A.¹^ORCID,Kudryashov Dmitri A.¹,Uvarov Alexander V.¹^ORCID,Baranov Artem I.¹,Maksimova Alina A.¹^ORCID,Abolmasov Sergey N.²,Gudovskikh Alexander S.¹³^ORCID

Affiliation:

1. Alferov University (Saint Petersburg Academic University), 194021 Saint Petersburg, Russia

2. R&D Center of Thin Film Technologies (Hevel LLC), 194021 Saint Petersburg, Russia

3. Saint Petersburg Electrotechnical University ≪LETI≫, 197376 Saint Petersburg, Russia

Funder

Russian Foundation for Basic Research

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c06435

Reference22 articles.

1. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

2. “Infinite Sensitivity” of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives

3. Black Mesoporous Silicon as a Contrast Agent for LED-Based 3D Photoacoustic Tomography

4. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

5. Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method

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