Conformal growth of GaP on high aspect ratio Si structured surface via plasma-enhanced atomic layer deposition-Reference-Cited by-同舟云学术

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Conformal growth of GaP on high aspect ratio Si structured surface via plasma-enhanced atomic layer deposition

Published:2024-02 Issue: Volume:477 Page:130357
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Uvarov Alexander,Gudovskikh Alexander,Baranov Artem,Maksimova Alina,Vyacheslavova Ekaterina,Kirilenko Demid

Funder

Saint Petersburg State University

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference30 articles.

1. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology;Yoshikawa;Sol. Energy Mater. Sol. Cells,2017

2. Progress in silicon microwire solar cells;Um;J. Mater. Chem. A,2020

3. Light trapping in thin silicon solar cells: a review on fundamentals and technologies;Saive;Prog. Photovolt. Res. Appl.,2021

4. Integration of silicon nanowires in solar cell structure for efficiency enhancement: a review;Sahoo;J. Mater.,2019

5. Effective passivation of black silicon surfaces via plasma-enhanced chemical vapor deposition grown conformal hydrogenated amorphous silicon layer;Özkol;Phys. Status Solidi Rapid Res. Lett.,2020

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