Melt‐grown p‐type GaAs with iron doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354006
Reference15 articles.
1. Iron doped bulk semi‐insulating GaAs
2. Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs
3. Transition-metal impurities in III-V compounds
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP:Fe and GaAs:Fe;Semiconductor Science and Technology;2002-01-11
2. Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs;Japanese Journal of Applied Physics;2001-04-15
3. Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths;Japanese Journal of Applied Physics;1998-09-15
4. Iron Concentrations in GaAs Diffused from a Spin-on Film;Japanese Journal of Applied Physics;1995-05-15
5. Fast Photoconductive Photodetectors Employing Iron-Diffusion into Epitaxial GaAs;Applications of Photonic Technology;1995
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