Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343866
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1. Fermi level control and deep levels in semi-insulating 4H–SiC;Journal of Applied Physics;1999-11
2. Electron paramagnetic resonance experiments applied to SI-GaAs;Progress in Crystal Growth and Characterization of Materials;1997-01
3. Properties of gallium arsenide purified by zone refining and zone levelling;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-10
4. Charge Redistribution and Potential Barrier Reconstruction in SI GaAs Caused by EL2 State Change;Journal de Physique I;1996-09
5. Melt‐grown p‐type GaAs with iron doping;Journal of Applied Physics;1993-06
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