Iron Concentrations in GaAs Diffused from a Spin-on Film-Reference-Cited by-同舟云学术

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Iron Concentrations in GaAs Diffused from a Spin-on Film

Published:1995-05-15 Issue:Part 2, No. 5B Volume:34 Page:L600-L602
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohsawa Jun,Nakamura Motohisa,Nekado Yoshinobu,Migitaka Masatoshi,Tsuchida Nuio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs;Japanese Journal of Applied Physics;2001-04-15

2. Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs;Japanese Journal of Applied Physics;2000-01-15

3. Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths;Japanese Journal of Applied Physics;1998-09-15

4. GaAs homojunction phototransistor with minority carrier transport assisted by photo-generated carrier profile in the base;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997

5. Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs;2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)

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