Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs-Reference-Cited by-同舟云学术

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Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs

Published:2000-01-15 Issue:Part 2, No. 1A/B Volume:39 Page:L13-L15
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohsawa Jun,Ozaki Yasutaka,Misaki Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes – A new approach;Solid-State Electronics;2008-08

2. Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs;Japanese Journal of Applied Physics;2001-04-15

3. Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs;2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)

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