Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss-Reference-Cited by-同舟云学术

Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss

Published:2001-06 Issue:11 Volume:89 Page:6285-6293
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chang Wai Jyh,Houng Mau Phon,Wang Yeong Her

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1367399

Reference17 articles.

1. High-field-induced degradation in ultra-thin SiO/sub 2/ films

2. Modeling and simulation of stress-induced leakage current in ultrathin SiO/sub 2/ films

3. Experimental evidence of inelastic tunneling in stress-induced leakage current

4. A new I-V model for stress-induced leakage current including inelastic tunneling

5. Mechanism of stress-induced leakage current in MOS capacitors

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