Tsu-Esaki modeling of tunneling currents in ferroelectric tunnel junctions-Reference-Cited by-同舟云学术

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Tsu-Esaki modeling of tunneling currents in ferroelectric tunnel junctions

Published:2017-12-21 Issue:23 Volume:122 Page:234301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tuomisto Noora¹,van Dijken Sebastiaan²,Puska Martti¹^ORCID

Affiliation:

1. COMP Centre of Excellence, Department of Applied Physics, Aalto University School of Science, PO Box 11100, FI-00076 Aalto, Finland

2. NanoSpin, Department of Applied Physics, Aalto University School of Science, PO Box 15100, FI-00076 Aalto, Finland

Funder

Academy of Finland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001823

Reference64 articles.

1. Overview of nanoelectronic devices

2. Superconducting quantum interference device instruments and applications

3. Nano Superconducting Quantum Interference device: A powerful tool for nanoscale investigations

4. Spin-dependent tunnelling in magnetic tunnel junctions

5. Spintronics: Fundamentals and applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parametric simulations of composite barrier FTJs under external bias at room temperature;Results in Physics;2023-04

2. Modeling of the Gate Tunneling Current in MFIS NCFETs;IEEE Transactions on Electron Devices;2021-11

3. Reversible Rectification of Microscale Ferroelectric Junctions Employing Liquid Metal Electrodes;ACS Applied Materials & Interfaces;2021-06-17

4. Mimicking Neurotransmitter Release and Long‐Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor;Advanced Intelligent Systems;2019-06

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