Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors-Reference-Cited by-同舟云学术

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Published:2014-12-28 Issue:24 Volume:116 Page:245302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Jae-sung¹,Oh Byung Su¹²,Piao Mingxing¹,Joo Min-Kyu¹³,Jang Ho-Kyun¹,Ahn Seung-Eon¹⁴,Kim Gyu-Tae¹

Affiliation:

1. School of Electrical Engineering, Korea University, Seoul 136-701, South Korea

2. Samsung Display Company, Yongin, South Korea

3. IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble, France

4. Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904843

Reference31 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

4. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

5. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

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