Effects of Pre-annealing on the Performance of Solution-processed Indium Zinc Oxide Thin-film Transistors
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Published:2018-06-30
Issue:3
Volume:18
Page:315-320
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ISSN:1598-1657
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Shan Fei,Kim Sung-Jin
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials