Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124981
Reference15 articles.
1. Effect of substrate miscut on the structural properties of InGaAs linear graded buffer layers grown by molecular-beam epitaxy on GaAs
2. Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy
3. Continuously graded buffers for structures grown on GaAs
4. Lattice engineered compliant substrate for defect-free heteroepitaxial growth
5. Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method
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2. Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy;Journal of Applied Physics;2008-01
3. Novel direct MOCVD growth of InxGa1−xAs and InP metamorphic layers on GaAs substrates;Journal of Materials Science: Materials in Electronics;2006-04
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