SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory-Reference-Cited by-同舟云学术

SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

Published:2019-05-06 Issue:18 Volume:114 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mahata Chandreswar¹,Kim Min-Hwi¹,Bang Suhyun¹,Kim Tae-Hyeon¹,Lee Dong Keun¹,Choi Yeon-Joon¹,Kim Sungjun²^ORCID,Park Byung-Gook¹^ORCID

Affiliation:

1. Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea

2. School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5085853

Reference35 articles.

1. HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

2. The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

4. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

5. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

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