1. V. Adams, J. Conner, M. Canonico, H. Desjardin, P. Grudowski, B. Gu, Z.H. Shi, S. Murphy, G. Spencer, S. Filipiak, D. Goedeke, B. Goolsby, V. Dhandapani, L. Prabhu, S. Backer, L.B. La, D. Burnett, B.Y. Nguyen, I. Cayrefourcq, and C. Mazuré, 2006 Symposium on VLSI Technology, 2006, pp. 130 and 131.
2. K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong, IEEE International Electron Devices Meeting, 2003, 03–49, p. 311.
3. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing
4. Strained Si on insulator technology: from materials to devices
5. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy