Study of Neutron Irradiation Effects on SOI and Strained SOI MuGFETs Assessed by Low-Frequency Noise

Abstract

A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on Silicon-on-Insulator (SOI) and strained SOI (sSOI) substrates. Both DC and low-frequency noise characteristics have been obtained in linear operation. It is shown that while a pronounced device-to-device variation can be noted, there is no clear impact of the strain on the radiation behavior.