Variation of lattice parameter with silicon concentration inn‐doped, liquid‐encapsulated Czochralski GaAs single crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100987
Reference16 articles.
1. Study of nonstoichiometry in undoped semi‐insulating GaAs using precise lattice parameter measurements
2. Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs
3. Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski‐grown GaAs
4. Lattice superdilation phenomena in doped GaAs
5. Precise lattice parameter determination of dislocation-free gallium arsenide—I
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1. The determination of rigid lattice shifts across delta-doped layers using regressional analysis;Ultramicroscopy;1998-05
2. Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates;Journal of Crystal Growth;1997-07
3. Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers;Journal of Crystal Growth;1997-02
4. Lattice dilation by free electrons in heavily doped GaAs:Si;Applied Physics Letters;1995-07-24
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