Study of nonstoichiometry in undoped semi‐insulating GaAs using precise lattice parameter measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97377
Reference14 articles.
1. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
2. Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs
3. Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
4. Measurements of Compositional Change in Semi-Insulating GaAs Single Crystals by Precise Lattice Parameter Measurements
5. Properties of vacancy defects in GaAs single crystals
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3. Determination of the stoichiometry of mixed microcrystals K x Cs y ZnCl 4 using instrumental neutron activation analysis;Fresenius' Journal of Analytical Chemistry;1998-01-12
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