Schottky barrier Ga1−xAlxAs1−ySbyalloy avalanche photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91982
Reference14 articles.
1. Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution
2. InxGa1−xAsyP1−y/InP heterojunction photodiodes
3. Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region
4. Ion‐implanted InGaAsP avalanche photodiode
5. High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm
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1. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989
2. Novel Surface States and the Quantum Hall Effect in an Anisotropic Three-Dimensional System;Physical Review Letters;1986-12-08
3. Effects of interface charge on the quantum Hall effect;Physical Review B;1986-05-15
4. A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy;Journal of Applied Physics;1986-04-15
5. Sperrschichtphotodetektoren;Optoelektronik II;1986
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