Ion‐implanted InGaAsP avalanche photodiode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90218
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4. GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
5. Near-infrared In<inf>1-x</inf>Ga<inf>x</inf>P<inf>1-z</inf>As<inf>z</inf>double-heterojunction lasers: Constant-temperature LPE growth and operation in an external-grating cavity
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2. Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy;Journal of Applied Physics;1997-11-15
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4. A Simple Analysis of the Magnetic Susceptibilities in Quantum Dots of Optoelectronic Materials in the Presence of a Parallel Magnetic Field;physica status solidi (b);1994-01-01
5. Influence of quantization of band states on the effective electron mass in quaternary alloys;Il Nuovo Cimento D;1992-09
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