Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3575572
Reference15 articles.
1. Reproducible switching effect in thin oxide films for memory applications
2. Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications
3. Highly durable and flexible memory based on resistance switching
4. Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
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