Highly durable and flexible memory based on resistance switching-Reference-Cited by-同舟云学术

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Highly durable and flexible memory based on resistance switching

Published:2010-04 Issue:4 Volume:54 Page:392-396
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Sungho,Yarimaga Oktay,Choi Sung-Jin,Choi Yang-Kyu

Funder

Nanoscale Mechatronics & Manufacturing

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Electronic paper: flexible active-matrix electronic ink display;Chen;Nature,2003

2. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics;Ju;Nat Nanotechnol,2007

3. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors;Mcalpine;Nat Mater,2007

4. A flexible polymer memory device;Li;Org Electron,2007

5. A polymer/semiconductor write-once read-many-times memory;Moller;Nature,2003

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4. Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices;Journal of Alloys and Compounds;2023-11

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