Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications-Reference-Cited by-同舟云学术

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Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications

Published:2008-04 Issue:4 Volume:29 Page:331-333
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee-Eun Yu ,Sungho Kim ,Min-Ki Ryu ,Sung-Yool Choi ,Yang-Kyu Choi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4475262/04468747.pdf?arnumber=4468747

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