Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358821
Reference12 articles.
1. The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy
2. Zinc Doping of MOCVD GaAs
3. Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc
4. The influence of the electrical properties of the solid phase on impurity incorparation during crystal growth
5. Intrinsic densityni(T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
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1. Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography;ACS Applied Materials & Interfaces;2016-09-27
2. Fundamental aspects of organometallic vapor phase epitaxy;Materials Science and Engineering: B;2001-11
3. Zn solubility and Fermi energy pinning in InP and InGaAs: growth vs. equilibrium;Materials Science and Engineering: B;1999-08
4. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide;Journal of Applied Physics;1999-05-15
5. Physical Processes Occurring on the Surface;Organometallic Vapor-Phase Epitaxy;1999
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