Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Recollections and reflections of MO-CVD
2. Proc. European Session of 6th Intern. Symp. on GaAs and Related Compounds;Bass,1977
3. Investigation of zinc incorporation in GaAs epilayers grown by low‐pressure metalorganic chemical‐vapor deposition
4. Zinc Doping of MOCVD GaAs
5. The growth of Magnesium-doped GaAs by the Om-Vpe process
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3. Point defects and diffusion in thin films of GaAs;Materials Science and Engineering: R: Reports;1997-10
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5. Fermi energy pinning at the surface during growth ofn- andp-type GaAs;Applied Physics Letters;1997-02-24
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