Intrinsic densityni(T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329958
Reference59 articles.
1. Conductivity and Hall Effect in the Intrinsic Range of Germanium
2. Electrical Properties of Silicon Containing Arsenic and Boron
3. Hall Effect and Conductivity of InSb
4. The Dependence of the Hall Coefficient of a Mixed Semiconductor upon Magnetic Induction as Exemplified by Indium Antimonide
5. The preparation and properties of gallium arsenide single crystals
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