Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1854745
Reference20 articles.
1. Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy
2. Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry
3. Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
4. Role of Oxygen at Screw Dislocations in GaN
5. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
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