Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1472481
Reference13 articles.
1. Growth of GaN by ECR-assisted MBE
2. Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy
3. Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
4. Correspondence
5. Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
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