Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations
Author:
Funder
Research projects for Excellence IKY/SIEMENS
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977063
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1. Metal–Oxide RRAM
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4. Multilevel resistive switching in Ti/CuxO/Pt memory devices
5. Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations
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