Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2397566
Reference11 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. Recent progress in group-III nitride light-emitting diodes
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Spectral Study of Photoluminescence from GaInN/GaN MQWs Using CW and Time-Resolved Measurements
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2. Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells;Applied Physics Letters;2016-10-31
3. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography;Journal of Applied Physics;2014-03-28
4. Phosphor-free nanopyramid white light-emitting diodes grown on {101¯1} planes using nanospherical-lens photolithography;Applied Physics Letters;2013-12-09
5. Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures;Journal of Electronic Materials;2009-04-10
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