Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

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Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells

Published:2016-10-31 Issue:18 Volume:109 Page:182101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kojima Takanori¹^ORCID,Takano Shota¹,Hasegawa Ryosuke¹,Timmerman Dolf¹,Koizumi Atsushi¹,Funato Mitsuru²^ORCID,Kawakami Yoichi²,Fujiwara Yasufumi¹

Affiliation:

1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Yamadaoka 2-1, Suita city, Osaka 565-0871, Japan

2. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo-ku, Kyoto 615-8510, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference24 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells

4. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

5. Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations

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