Effects of post-growth annealing on the structure and electro-optical properties of low-temperature grown GaAs-Reference-Cited by-同舟云学术

Effects of post-growth annealing on the structure and electro-optical properties of low-temperature grown GaAs

Published:2008-06-15 Issue:12 Volume:103 Page:123528
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Youn Doo-Hyeb,Lee Seung-Hwan,Ryu Han-Cheol,Jung Se-Young,Kang Seung-Bum,Kwack Min-Hwan,Kim Sungil,Choi Sang-Kuk,Baek Mun-Cheol,Kang Kwang-Yong,Kim Chang-Seop,Yee Ki-Ju,Ji Young-Bin,Lee Eui-Su,Jeon Tae-In,Kim Seong-Jin,Kumar Sanjeev,Kim Gil-Ho

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2946452

Reference17 articles.

1. New MBE buffer used to eliminate backgating in GaAs MESFETs

2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

3. Low-temperature growth of GaAs and AlGaAs by MBE and effects of post-growth thermal annealing

4. Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs

5. Molecular beam epitaxial GaAs grown at low temperatures

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fundamental basics on measurement instruments and techniques for ultrafast magnetism dynamics;Current Applied Physics;2024-05

2. Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties;Journal of Physics: Condensed Matter;2021-06-16

3. Ultrafast carrier dynamics and THz conductivity in epitaxial-grown LT-GaAs on silicon for development of THz photoconductive antenna detectors;Journal of Physics D: Applied Physics;2019-12-20

4. Control of the Urbach band tail and interband dephasing time with post-growth annealing in low-temperature-grown GaAs;AIP Advances;2018-04

5. The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide;Technical Physics Letters;2018-01