Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties-Reference-Cited by-同舟云学术

Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties

Published:2021-06-16 Issue:31 Volume:33 Page:315704
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Afalla Jessica^ORCID,Prieto Elizabeth Ann^ORCID,Husay Horace Andrew,Gonzales Karl Cedric,Catindig Gerald,Abulikemu Aizitiaili,Somintac Armando^ORCID,Salvador Arnel,Estacio Elmer^ORCID,Tani Masahiko,Hase Muneaki^ORCID

Funder

University of the Philippines

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

https://iopscience.iop.org/article/10.1088/1361-648X/ac04cc/pdf

Reference37 articles.

1. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

2. Dissolution of antiphase domain boundaries in GaAs on Si(001) via post-growth annealing

3. Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

4. Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon

5. GaAs epitaxy on Si substrates: modern status of research and engineering

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1. Effects of A s 8 structure formation on the surface morphology and internal microstructure of GaAs thin films;Journal of Physics: Condensed Matter;2024-05-28

2. Atomically Precise Delineation of As Antisite Defect States from Undoped Gallium Arsenide Host Lattice by Scanning Tunneling Microscopy and Spectroscopy Measurements and Density Functional Theory Calculations;physica status solidi (b);2022-03-31