Author:
Bogumilowicz Y.,Hartmann J.M.,Rochat N.,Salaun A.,Martin M.,Bassani F.,Baron T.,David S.,Bao X.-Y.,Sanchez E.
Funder
French “Recherches Technologiques de Base” and RENATECH programs
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. GaAs epitaxy on Si substrates: modern status of research and engineering
2. Nanometre-scale electronics with III–V compound semiconductors
3. M. Radosavljevic, G. Dewey, J.M. Fastenau, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, R. Chau, Electron Devices Meeting (IEDM), in: Proceedings of the 2010 IEEE International, 6.1.1, 2010.
4. Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator
Cited by
26 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献