Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112490
Reference14 articles.
1. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
2. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
3. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
4. Annealing dynamics of molecular‐beam epitaxial GaAs grown at 200 °C
5. Tunneling spectroscopy of midgap states induced by arsenic precipitates in low‐temperature‐grown GaAs
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