Si interstitial contribution of F+ implants in crystalline Si-Reference-Cited by-同舟云学术

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Si interstitial contribution of F+ implants in crystalline Si

Published:2008-05 Issue:9 Volume:103 Page:093538
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

López Pedro,Pelaz Lourdes,Duffy R.,Meunier-Beillard P.,Roozeboom F.,van der Tak K.,Breimer P.,van Berkum J. G. M.,Verheijen M. A.,Kaiser M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2917297

Reference21 articles.

1. Advanced front-end processes for the 45nm CMOS technology node

2. Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion

3. Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion

4. Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

5. Effect of fluorine implantation dose on boron thermal diffusion in silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect engineering for shallow n-type junctions in germanium: Facts and fiction;physica status solidi (a);2016-07-18

2. Fluorine implantation in germanium for dopant diffusion control;AIP Conference Proceedings;2012

3. Fluorine effect on As diffusion in Ge;Journal of Applied Physics;2011-06

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