Epitaxial explosive crystallization of amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101668
Reference17 articles.
1. Heat of crystallization and melting point of amorphous silicon
2. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
3. Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation
4. Supercooling and Nucleation of Silicon after Laser Melting
5. Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation
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1. Impact of solidification dynamics on crystal properties of silicon molten by a nanosecond laser pulse;Applied Physics A;2018-02-16
2. Explosive crystallization in thin amorphous layers on heat conducting substrates;Journal of Applied Physics;2015-06-28
3. Formation of High-Quality μm-Order-Thick Poly-Si Films on Glass-Substrates by Flash Lamp Annealing;Subsecond Annealing of Advanced Materials;2014
4. Laser-Induced Epitaxial Growth Technology for Monolithic Three Dimensional Integrated Circuits;ECS Journal of Solid State Science and Technology;2013
5. In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization;Optik;2011-04
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