On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack-Reference-Cited by-同舟云学术

On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

Published:2008-04-21 Issue:16 Volume:92 Page:163508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maji Debabrata,Crupi Felice,Giusi Gino,Pace Calogero,Simoen Eddy,Claeys Cor,Rao V. Ramgopal

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2916821

Reference17 articles.

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 28.

2. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

3. Oxygen scattering and initial chemisorption probability on Ge(100)

4. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

5. Ultrathin Si capping layer suppresses charge trapping in HfOxNy∕Ge metal-insulator-semiconductor capacitors

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