Low-Frequency Noise Characterization of GeO<sub><italic>x</italic></sub> Passivated Germanium MOSFETs-Reference-Cited by-同舟云学术

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Low-Frequency Noise Characterization of GeO_x Passivated Germanium MOSFETs

Published:2015-07 Issue:7 Volume:62 Page:2078-2083
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fang Wen,Simoen Eddy,Arimura Hiroaki,Mitard Jerome,Sioncke Sonja,Mertens Hans,Mocuta Anda,Collaert Nadine,Luo Jun,Zhao Chao,Thean Aaron Voon-Yew,Claeys Cor

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7127078/07116554.pdf?arnumber=7116554

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs;Applied Physics Letters;2023-05-29

2. Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates;IEEE Transactions on Electron Devices;2020-11

3. Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETs;IEEE Transactions on Electron Devices;2020-11

4. Low-Frequency Noise Characterization of Germanium n-Channel FinFETs;IEEE Transactions on Electron Devices;2020-07

5. Low-Frequency Noise in III–V, Ge, and 2D Transistors;Noise in Nanoscale Semiconductor Devices;2020

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